IRLL014NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLL014NPBF
Manufacturer

Infineon
ChipWorker Part#

CW5319018
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223 N-CH 55V 2.8A
Documentation

Datasheet

IRLL014NPBF Global Supplier

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IRLL014NPBF Specifications

Attribute	Attribute Value

Part Number	IRLL014NPBF
Manufacturer	Infineon
ChipWorker Part#	CW5319018
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.14 Ω
Polarity	N-Channel
Power Dissipation	2.1 W
Threshold Voltage	2 V
Input Capacitance	230 pF
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	2.8A
Rise Time	4.9 ns
Input Capacitance (Ciss)	230pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	2.9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRLL014NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Advanced process technology
Ultra low on-resistance
Surface mount

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