IRS2106SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRS2106SPBF
Manufacturer

Infineon
ChipWorker Part#

CW5757334
Category

FET Driver
Package

SOIC-8
Description

600V High and Low Side Driver IC with typical 0.29A source and 0.6A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
Documentation

Datasheet

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IRS2106SPBF Specifications

Attribute	Attribute Value

Part Number	IRS2106SPBF
Manufacturer	Infineon
ChipWorker Part#	CW5757334
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	10.0V (min)
Power Rating	625 mW
Rise/Fall Time	100ns, 35ns
Number of Outputs	2 Output
Output Voltage	600 V
Output Current	290 mA
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	625 mW
Rise Time	220 ns
Fall Time	80 ns
Fall Time (Max)	80 ns
Fall Time (Max)	220 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	625 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRS2106SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout for both channels
3.3, 5 and 15V Input logic compatible
Matched propagation delay for both channels
Logic and power ground ±5V offset
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs

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