IXDR30N120D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXDR30N120D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW56707796
Category

IGBT Transistor, IGBT Module
Package

TO-247
Description

IXYS SEMICONDUCTOR IXDR30N120D1 IGBT Single Transistor, Isolated, 50A, 2.4V, 200W, 1.2kV, TO-247AD, 3Pins
Documentation

Datasheet

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IXDR30N120D1 Specifications

Attribute	Attribute Value

Part Number	IXDR30N120D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW56707796
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Rise Time	70 ns
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	40 ns
Input Power (Max)	200 W
Fall Time	70 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.34 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXDR30N120D1 IGBT transistor from Ixys Corporation is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 200000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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