IXFH14N100Q2 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH14N100Q2
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW58010592
Category

High Voltage MOS Transistor
Package

TO-247-3
Description

TO-247AD N-CH 1000V 14A
Documentation

Datasheet

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IXFH14N100Q2 Specifications

Attribute	Attribute Value

Part Number	IXFH14N100Q2
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW58010592
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.9 Ω
Polarity	N-Channel
Power Dissipation	500 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	1 kV
Continuous Drain Current (Ids)	14.0 A
Rise Time	10 ns
Input Capacitance (Ciss)	2700pF @25V(Vds)
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500W (Tc)
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Weight	6.00 g
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFH14N100Q2 is a Q2-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
Double metal process for low gate resistance
International standard package
Avalanche energy and current rated
UL94V-0 Flammability rating
High dV/dt, low Qg and low trr
Easy to mount
Space savings
High power density

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