IXFK26N120P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFK26N120P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW45213893
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

TO-264 N-CH 1200V 26A
Documentation

Datasheet

IXFK26N120P Global Supplier

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IXFK26N120P Specifications

Attribute	Attribute Value

Part Number	IXFK26N120P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW45213893
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.5 Ω
Polarity	N-Channel
Power Dissipation	960 W
Threshold Voltage	6.5 V
Drain to Source Voltage (Vds)	1.2 kV
Breakdown Voltage (Drain to Source)	1200 V
Continuous Drain Current (Ids)	26A
Rise Time	55 ns
Input Capacitance (Ciss)	14000pF @25V(Vds)
Fall Time	58 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	960W (Tc)
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Size-Length	19.96 mm
Size-Width	5.13 mm
Size-Height	26.16 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20

Product Description

Looking for a component that can both amplify and switch between signals within your circuit? The IXFK26N120P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 960000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

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