IXFK80N60P3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFK80N60P3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW51320203
Category

High Voltage MOS Transistor
Package

TO-264-3
Description

TO-264AA N-CH 600V 80A
Documentation

Datasheet

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IXFK80N60P3 Specifications

Attribute	Attribute Value

Part Number	IXFK80N60P3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW51320203
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.077 Ω
Polarity	N-Channel
Power Dissipation	1.3 kW
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	80A
Rise Time	25 ns
Input Capacitance (Ciss)	13100pF @25V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1300W (Tc)
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Size-Length	19.96 mm
Size-Width	5.13 mm
Size-Height	26.16 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFK80N60P3 is a 600V N-channel Enhancement Mode Polar3™ Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
Dynamic dV/dt rating
Avalanche rated
Low Qg
Low drain-to-tab capacitance
Low inductance
Easy to mount
Space-saving s

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