IXGT30N120B3D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGT30N120B3D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW55409763
Category

IGBT Transistor, IGBT Module
Package

TO-268-3
Description

IXYS SEMICONDUCTOR IXGT30N120B3D1 IGBT Single Transistor, 50A, 2.96V, 300W, 1.2kV, TO-268, 3Pins New
Documentation

Datasheet

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IXGT30N120B3D1 Specifications

Attribute	Attribute Value

Part Number	IXGT30N120B3D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW55409763
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-268-3
Number of Positions	3 Position
Power Dissipation	300 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	100 ns
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
	expand all
Size-Length	16.05 mm
Size-Width	14 mm
Size-Height	5.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

High speed Low Vsat PT
IGBTs 3-20 kHz switching
**V**CES **= 1200V**
**I**C110 **= 30A**
**V**CE(sat) ≤**£ ****3.5****V**
Tfi(typ)*= 204ns**
Features
Optimized for low conduction and switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
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UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines

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