JAN2N2222AUB - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JAN2N2222AUB
Manufacturer

Microsemi
ChipWorker Part#

CW71079593
Category

BJT Transistor, BJT
Package

SMD-3
Description

Trans GP BJT NPN 50V 0.8A 3Pin UB
Documentation

Datasheet

JAN2N2222AUB Global Supplier

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JAN2N2222AUB Specifications

Attribute	Attribute Value

Part Number	JAN2N2222AUB
Manufacturer	Microsemi
ChipWorker Part#	CW71079593
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SMD-3
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	50 V
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Pack
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

Product Description

Thanks to Microsemi, your circuit can handle high levels of voltage using the NPN JAN2N2222AUB general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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