JANTX2N2222AUB - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX2N2222AUB
Manufacturer

Microsemi
ChipWorker Part#

CW93528489
Category

BJT Transistor, BJT
Package

SMD-3
Description

JANTX Series 50V 800mA 0.5W(1/2W) SMT NPN Switching Transistor - UB-3
Documentation

Datasheet

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JANTX2N2222AUB Specifications

Attribute	Attribute Value

Part Number	JANTX2N2222AUB
Manufacturer	Microsemi
ChipWorker Part#	CW93528489
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SMD-3
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	50 V
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Pack
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Add switching and amplifying capabilities to your electronic circuit with this NPN JANTX2N2222AUB GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

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