2SD2012 ,BJT Transistor, BJT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

79 points

Part No

2SD2012
Manufacturer

ST Microelectronics
ChipWorker Part#

CW63417590
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT NPN 60V 3A 3Pin(3+Tab) TO-220F Tube
Documentation

Datasheet
Ships from

Moscow
Наличие

2 pcs In Stock
Estimated Price

$ 0.09

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2SD2012 Specifications

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Attribute	Attribute Value

Part Number	2SD2012
Manufacturer	ST Microelectronics
ChipWorker Part#	CW63417590
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	25 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	25 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	100 @500mA, 5V
hFE Max	320
Input Power (Max)	25 W
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	25000 mW
	expand all
Size-Length	10.36 mm
Size-Width	4.9 mm
Size-Height	9.39 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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Product Description

DESCRIPTION
The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications.
■ HIGH DC CURRENT GAIN
■ LOW SATURATION VOLTAGE
■ INSULATED PACKAGE FOR EASY MOUNTING
APPLICATIONS
■ GENERAL PURPOSE POWER AMPLIFIERS
■ GENERAL PURPOSE SWITCHING

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