LM2733YMF - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LM2733YMF
Manufacturer

TI
ChipWorker Part#

CW29586263
Category

DC to DC Converter
Package

SOT-23-5
Description

Conv DC-DC 2.7V to 14V Step Up Single-Out 3V to 40V 5Pin SOT-23 T/R
Documentation

Datasheet

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LM2733YMF Specifications

Attribute	Attribute Value

Part Number	LM2733YMF
Manufacturer	TI
ChipWorker Part#	CW29586263
Category	DC to DC Converter
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23-5
Frequency	600 kHz
Number of Outputs	1 Output
Output Voltage	3V ~ 40V
Output Current	1.5 A
Number of Positions	5 Position
Quiescent Current	1.10 mA
Number of Regulated Outputs	1 Output
Switching Frequency	600 kHz
Topology	Boost
Input Voltage (Max)	14 V
Input Voltage (Min)	2.7 V
Output Voltage (Max)	40 V
Output Voltage (Min)	3 V
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7 V
Input Voltage	14 V
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Operating Temperature	-40℃ ~ 125℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LM2733YMF is a current-mode Boost Converter with internal FET switch. This switching regulator operates at fixed frequency of 1.6MHz and uses small inductors and capacitors which results in the industry"s highest power density. The 40V internal switch makes these solutions perfect for boosting to voltages of 16V or greater. This converter has a logic-level shutdown pin that can be used to reduce quiescent current and extend battery life. Protection is provided through cycle-by-cycle current limiting and thermal shutdown. Internal compensation simplifies design and reduces component count.
DMOS FET switch
Low RDS (ON) DMOS FET
<1µA Low shutdown current
Uses tiny capacitors and inductors
Cycle-by-cycle current limit
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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