LM4040A30IDBZT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LM4040A30IDBZT
Manufacturer

TI
ChipWorker Part#

CW9279233
Category

Voltage Reference
Package

SOT-23-3
Description

V-Ref Precision 3V 15mA 3Pin SOT-23 T/R
Documentation

Datasheet

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LM4040A30IDBZT Specifications

Attribute	Attribute Value

Part Number	LM4040A30IDBZT
Manufacturer	TI
ChipWorker Part#	CW9279233
Category	Voltage Reference
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Capacitance Tolerance	±0.1 %
Output Voltage	3 V
Output Current	15 mA
Number of Channels	1 Channel
Number of Positions	3 Position
Output Voltage (Max)	3 V
Output Voltage (Min)	3 V
Output Current (Max)	15 mA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Accuracy	±0.1 %
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Size-Length	3.04 mm
Size-Width	1.4 mm
Size-Height	1.02 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Temperature Coefficient	±20 ppm/℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LM4040A30IDBZT is a Precision Micropower Shunt Voltage Reference that caters to a vast array of applications. The 2-pin fixed-output device requires no external capacitors for operation and is stable with all capacitive loads. Additionally, the reference offers low dynamic impedance, low noise and low temperature coefficient to ensure a stable output voltage over a wide range of operating currents and temperatures. The LM4040 uses fuse and Zener-zap reverse breakdown voltage trim during wafer sort to offer four output voltage tolerances, ranging from 0.1% (maximum) for the A grade to 1% (maximum) for the D grade. Thus, a great deal of flexibility is offered to designers in choosing the best cost-to-performance ratio for their applications.
35µVRMS Typical low output noise
No output capacitor required
Stable with all capacitive loads
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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