LMV358M ,Operational Amplifier, OP Amp IC - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

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129 points

Part No

LMV358M
Manufacturer

TI
ChipWorker Part#

CW9580900
Category

Operational Amplifier, OP Amp IC
Package

SOIC-8
Description

TEXAS INSTRUMENTS LMV358M Operational Amplifier, Dual, 2 Amplifier, 1MHz, 1V/µs, 2.7V to 5.5V, SOIC, 8Pins
Documentation

Datasheet
Ships from

Moscow
Наличие

10 pcs In Stock
Estimated Price

$ 0.16

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LMV358M Specifications

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Attribute	Attribute Value

Part Number	LMV358M
Manufacturer	TI
ChipWorker Part#	CW9580900
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	5.00 V
Output Current	60.0 mA
Supply Current	210 µA
Number of Circuits	2 Circuit
Number of Channels	2 Channel
Number of Positions	8 Position
Common Mode Rejection Ratio	50 dB
Input Offset Drift	5.00 µV/K
Bandwidth	1 MHz
Slew Rate	1.00 V/μs
Gain Bandwidth Product	1 MHz
Input Offset Voltage	1.7 mV
Input Bias Current	15 nA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Gain Bandwidth	1 MHz
Minimum CMRR Range	50 dB
Supply Voltage	2.7V ~ 5.5V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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Product Description

The LMV358M is a general purpose low voltage Operational Amplifier which has rail-to-rail output swing capability and the input common-mode voltage range includes ground. This operational amplifier exhibits excellent speed to power ratio, achieving 1MHz of bandwidth and 1V/µs slew rate with low supply current. The op-amp is built with Texas Instruments"s advanced submicron silicon-gate BiCMOS process and has bipolar input and output stages for improved noise performance and higher output current drive.
No crossover distortion
Rail-to-rail output swing
Low supply current
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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