MBR1100G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MBR1100G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11558785
Category

Schottky Diode
Package

DO-41
Description

Diode Schottky 100V 1A 2Pin DO-41 Bag
Documentation

Datasheet

MBR1100G Global Supplier

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MBR1100G Specifications

Attribute	Attribute Value

Part Number	MBR1100G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11558785
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	DO-41
Voltage Rating (DC)	100 V
Current Rating	1.00 A
Halogen Free Status	Halogen Free
Output Current	≤1.00 A
Number of Positions	2 Position
Forward Voltage	0.79 V
Polarity	Standard
Forward Current	1 A
Max Forward Surge Current (Ifsm)	50 A
Maximum Forward Voltage (Max)	790 mV
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature (Max)	175 ℃
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Size-Length	5.2 mm
Size-Width	2.7 mm
Operating Temperature	-65℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MBR1100G is an axial-lead Schottky Rectifier with epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.
Cathode indicated by polarity band
Low reverse current
Low stored charge, majority carrier conduction
Low power loss/high efficiency
Highly stable oxide passivated junction
Guard-ring for stress protection
Low forward voltage
High surge capacity
All external surfaces corrosion-resistant

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