MBT3946DW1T2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MBT3946DW1T2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8791061
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 NPN+PNP 40V 0.2A
Documentation

Datasheet

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MBT3946DW1T2G Specifications

Attribute	Attribute Value

Part Number	MBT3946DW1T2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8791061
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Frequency	300 MHz
Voltage Rating (DC)	40.0 V
Current Rating	200 mA
Number of Positions	6 Position
Polarity	NPN, PNP
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.2A
hFE Min	100 @10mA, 1V
Input Power (Max)	150 mW
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

This specially engineered npn and PNP MBT3946DW1T2G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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