MD2310FX ,BJT Transistor, BJT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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88 points

Part No

MD2310FX
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3700744
Category

BJT Transistor, BJT
Package

TO-3-3
Description

ISOWATT218FX NPN 700V 14A
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.65

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MD2310FX Specifications

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Attribute	Attribute Value

Part Number	MD2310FX
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3700744
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Rating	62 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	62 W
Isolation Voltage	2.5 kV
Breakdown Voltage (Collector to Emitter)	700 V
Continuous Collector Current	14A
hFE Min	6 @7A, 5V
Input Power (Max)	62 W
DC Current Gain (hFE)	28
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	62000 mW
	expand all
Size-Length	15.7 mm
Size-Width	5.7 mm
Size-Height	26.7 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The MD2310FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
State-of-the-art technology - Diffused collector enhanced generation
Stable performances versus operating temperature variation
Low base-drive requirements
Tight hFE range at operating collector current
Fully insulated
Well-controlled hFE parameter for increased reliability

expand all

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