MJ11032G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ11032G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW803593
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-204 NPN 120V 50A
Documentation

Datasheet

MJ11032G Global Supplier

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MJ11032G Specifications

Attribute	Attribute Value

Part Number	MJ11032G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW803593
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	120 V
Current Rating	50.0 A
Power Rating	300 W
Output Voltage	120 V
Output Current	50 A
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	300 W
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	50A
hFE Min	1000
hFE Max	18000
Input Power (Max)	300 W
DC Current Gain (hFE)	18000
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
Input Voltage	5 V
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Size-Length	38.86 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications.
High DC current gain
Monolithic construction with built-in base-emitter shunt resistor

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