MJW18020G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJW18020G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW15980040
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 NPN 1000V 30A
Documentation

Datasheet

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MJW18020G Specifications

Attribute	Attribute Value

Part Number	MJW18020G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW15980040
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Frequency	13 MHz
Voltage Rating (DC)	450 V
Current Rating	20.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	450 V
Continuous Collector Current	30A
hFE Min	14 @3A, 5V
Input Power (Max)	250 W
DC Current Gain (hFE)	4
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	250 W
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The MJW18020G is a NPN bipolar high voltage Power Transistor specifically designed for motor control applications, high power supplies and UPSs for which the high reproducibility of DC and switching parameters minimizes the dead time in bridge configurations.
High and excellent gain linearity
Fast and very tight switching times parameters tsi and tfi
Very stable leakage current due to the planar structure
High reliability

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