MMBT5550LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBT5550LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1638322
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 140V 0.6A
Documentation

Datasheet

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MMBT5550LT1G Specifications

Attribute	Attribute Value

Part Number	MMBT5550LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1638322
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	140 V
Current Rating	600 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	140 V
Continuous Collector Current	0.6A
hFE Min	60 @10mA, 5V
Input Power (Max)	225 mW
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	3.04 mm
Size-Width	1.4 mm
Size-Height	1.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MMBT5550LT1G is a NPN high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications.
Saves board space
AEC-Q101 qualified and PPAP capable

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