MMBTA64LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBTA64LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5296084
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 PNP 30V 0.5A
Documentation

Datasheet

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MMBTA64LT1G Specifications

Attribute	Attribute Value

Part Number	MMBTA64LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5296084
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	-30.0 V
Current Rating	-500 mA
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	0.5A
hFE Min	20000 @100mA, 5V
Input Power (Max)	225 mW
DC Current Gain (hFE)	20000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	125MHz (Min)
Power Dissipation (Max)	300 mW
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Size-Length	3.04 mm
Size-Width	1.3 mm
Size-Height	1.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**PNP Darlington Transistors, ON Semiconductor**
These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.

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