MMSD301T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMSD301T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9293000
Category

Schottky Diode
Package

SOD-123
Description

ON SEMICONDUCTOR MMSD301T1G RF Schottky Diode, Barrier, Single, 30V, 200mA, 600mV, 0.9pF, SOD-123
Documentation

Datasheet

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MMSD301T1G Specifications

Attribute	Attribute Value

Part Number	MMSD301T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9293000
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	SOD-123
Voltage Rating (DC)	30.0 V
Current Rating	100 mA
Capacitance	0.9 pF
Output Current	≤200 mA
Forward Voltage	600mV @10mA
Polarity	Standard
Power Dissipation	225 mW
Forward Current	200 mA
Maximum Forward Voltage (Max)	600 mV
Forward Current (Max)	200 mA
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	225 mW
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Size-Length	2.84 mm
Size-Width	1.8 mm
Size-Height	1.25 mm
Operating Temperature	-55℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MMSD301T1G is a Schottky Barrier Diode designed for high-efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
Extremely low minority carrier lifetime
Very low capacitance
Low reverse leakage
-55 to 125°C Operating junction temperature range

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