MMUN2211LT1G ,BJT Transistor, BJT - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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231 points

Part No

MMUN2211LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW951540
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 50V 100mA
Documentation

Datasheet
Ships from

Moscow
Наличие

58 pcs In Stock
Estimated Price

$ 0.01

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MMUN2211LT1G Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	MMUN2211LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW951540
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	50.0 V
Current Rating	100 mA
Power Rating	246 mW
Halogen Free Status	Halogen Free
Polarity	NPN
Power Dissipation	246 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	35 @5mA, 10V
hFE Max	35
Input Power (Max)	246 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	400 mW
Supply Voltage	1.8 V
	expand all
Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO-236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies circuit design
Compact board space
Reduced component count
AEC-Q101 qualified
Base input resistor is 10Kohm
Base emitter resistor is 10kohm
Collector emitter voltage VCEO of 50VDC
Continuous collector current of 100mAdc

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