MTB50P03HDLT4G - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoMTB50P03HDLT4G
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ManufacturerON Semiconductor
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ChipWorker Part#CW39317693
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionD2PAK P-CH 30V 50A
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DocumentationDatasheet
Payment Methods and Delivery
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MTB50P03HDLT4G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | MTB50P03HDLT4G |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW39317693 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -50.0 A |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | P-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 340 ns |
| Input Capacitance (Ciss) | 4900pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 218 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| expand all | |
| Size-Length | 10.29 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- Power MOSFET
- 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
- This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time.
- Features
- •Avalanche Energy Specified
- •Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- •Diode is Characterized for Use in Bridge Circuits
- •IDSSand VDS(on)Specified at Elevated Temperature
- •Short Heatsink Tab Manufactured − Not Sheared
- •Specially Designed Leadframe for Maximum Power Dissipation
- •Pb−Free Packages are Available
Delivery
Chipworker Certification
Ordering Information
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