MTD3055VL - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MTD3055VL
Manufacturer

ON Semiconductor
ChipWorker Part#

CW21340040
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK
Documentation

Datasheet

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MTD3055VL Specifications

Attribute	Attribute Value

Part Number	MTD3055VL
Manufacturer	ON Semiconductor
ChipWorker Part#	CW21340040
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	60.0 V
Current Rating	12.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.18 Ω
Polarity	N-Channel
Power Dissipation	3.9 W
Threshold Voltage	1.5 V
Input Capacitance	570 pF
Gate Charge	10.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.0 A
Input Capacitance (Ciss)	570pF @25V(Vds)
Input Power (Max)	1.5 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	48 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

12 AMPERES 60 VOLTS RDS(on)= 180 mΩ
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature

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