NAND256W3A2BN6E - Micron

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NAND256W3A2BN6E
Manufacturer

Micron
ChipWorker Part#

CW88676387
Category

Flash Memory, Flash
Package

TSOP-48
Description

SLC NAND Flash Parallel 3V/3.3V 256Mbit 32M x 8Bit 12us 48Pin TSOP Tray
Documentation

Datasheet

NAND256W3A2BN6E Global Supplier

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NAND256W3A2BN6E Specifications

Attribute	Attribute Value

Part Number	NAND256W3A2BN6E
Manufacturer	Micron
ChipWorker Part#	CW88676387
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	48 Pin
Case/Package	TSOP-48
Supply Voltage (DC)	2.70V (min)
Voltage Rating (DC)	3.00 V
Supply Current	20 mA
Number of Positions	48 Position
Number of Bits	8 Bit
Access Time	12 µs
Memory Size	32000000 B
Access Time(Max)	12000 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

Product Description

The NAND256W3A2BN6E is a 256MB non-volatile NAND Flash Memory that uses the single level cell NAND cell technology. It is referred to as the small page family. The device ranges from 128MB to 1GB and operate with either a 1.8/3V voltage supply. The size of a page is either 528 bytes or 264 Words depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the data input/output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. The device features an open-drain ready/busy output that can be used to identify if the program/erase/read controller is currently active. The use of an open-drain output allows the ready/ busy pins from several memories to be connected to a single pull-up resistor. A copy back command is available to optimize the management of defective blocks.
High density
Multiplexed address/data
Pinout compatibility for all densities
Copy back program mode - Fast page copy without external buffering
Fast block erase - Block erase time - 2ms typical
Status register
Electronic signature
Chip enable DON"T CARE - Simple interface with microcontroller
Hardware data protection - Program/erase locked during power transitions
Data integrity - 100000 program/erase cycles
10 Years data retention

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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