NIS5135MN1TXG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NIS5135MN1TXG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW18327837
Category

Battery Management IC
Package

DFN-10
Description

Hot Swap Controller 1CH 18V N-Channel Positive Voltage 10Pin DFN EP T/R
Documentation

Datasheet

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NIS5135MN1TXG Specifications

Attribute	Attribute Value

Part Number	NIS5135MN1TXG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW18327837
Category	Battery Management IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	10 Pin
Case/Package	DFN-10
Supply Voltage (DC)	3.10V (min)
Current Rating	3.6 A
Halogen Free Status	Halogen Free
Input Voltage (DC)	18.0 V
Output Current	3.6 A
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	10 Position
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Voltage Rating	5 V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	3.1 V
Input Voltage	3.1V ~ 18V
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Size-Length	3 mm
Size-Width	3 mm
Size-Height	0.95 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NIS5135MN1TXG is a +5volt electronic fuse in 10 pin DFN package. It is a cost effective, resettable fuse which can greatly enhance reliability of hard drive or other circuit from both catastrophic and shutdown failures. The device contains circuits to monitor input voltage, output voltage, output current and die temperature. It is designed to buffer load device from excessive input voltage which can damage sensitive circuits. The NIS5135MN1TXG also includes an overvoltage clamp circuit that limits output voltage during transients but does not shut the unit down thereby allowing load circuit to continue operation. It is typically used in mother board, hard drives and fan drives.
Thermal latching option
Integrated power device
Power device thermally protected and no external current shunt required
Minimum operating voltage of 3.1V and on-resistance of 68mohm at TJ = 140°C
Continuous current of 3.6A at TA = 25°C and off state output voltage of 50mV
Internal charge pump, undervoltage lockout and circuit overvoltage clamp
2000V human body model (HBM), 200V machine model (MM) ESD ratings
Delay time (enabling of chip to ID = 100mA with 1 A resistive load) of 500µs
Bias current (operational) of 1.5mA and bias current (shutdown) of 1mA
Operating temperature range from -40°C to 150°C

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