NSS20101JT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS20101JT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW14763383
Category

BJT Transistor, BJT
Package

SC-89-3
Description

SC-89 NPN 20V 2A
Documentation

Datasheet

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NSS20101JT1G Specifications

Attribute	Attribute Value

Part Number	NSS20101JT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW14763383
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SC-89-3
Frequency	350 MHz
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	255 mW
Input Capacitance	40 pF
Breakdown Voltage (Collector to Emitter)	20 V
Continuous Collector Current	2A
hFE Min	200 @100mA, 2V
Input Power (Max)	300 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The versatility of this NPN NSS20101JT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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