NSV1C201LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSV1C201LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW41096529
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 100V 3A
Documentation

Datasheet

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NSV1C201LT1G Specifications

Attribute	Attribute Value

Part Number	NSV1C201LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW41096529
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	110 MHz
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	710 mW
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	3A
hFE Min	120 @500mA, 2V
hFE Max	360 @500mA, 2V
Input Power (Max)	490 mW
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	710 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Use this versatile NPN NSV1C201LT1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 710 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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