NTE123AP - NTE Electronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTE123AP
Manufacturer

NTE Electronics
ChipWorker Part#

CW4351775
Category

BJT Transistor, BJT
Package

TO-92
Description

TO-92 NPN 40V 0.6A
Documentation

Datasheet

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NTE123AP Specifications

Attribute	Attribute Value

Part Number	NTE123AP
Manufacturer	NTE Electronics
ChipWorker Part#	CW4351775
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92
Frequency	250 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	625 mW
Breakdown Voltage (Collector to Base)	60.0 V (min)
Breakdown Voltage (Collector to Emitter)	40.0 V
Continuous Collector Current	0.6A
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350 mW
	expand all
Material	Silicon
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
HTS Code	85412100959
ECCN Code	EAR99

Product Description

The NTE123AP is a silicon NPN Transistor designed for use in audio amplifier and switch applications.
20ns Rise time
30ns Fall time

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