NVS4001NT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NVS4001NT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8151165
Category

MOSFET, MOSFET Transistor
Package

SOT-323-3
Description

SC-70 N-CH 30V 0.27A
Documentation

Datasheet

NVS4001NT1G Global Supplier

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NVS4001NT1G Specifications

Attribute	Attribute Value

Part Number	NVS4001NT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8151165
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-323-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.5 Ω
Polarity	N-CH
Power Dissipation	330 mW
Threshold Voltage	1.2 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	0.27A
Rise Time	23 ns
Input Capacitance (Ciss)	33pF @5V(Vds)
Fall Time	82 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	330mW (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor"s NVS4001NT1G power MOSFET can provide a solution. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

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