PD57006 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PD57006
Manufacturer

ST Microelectronics
ChipWorker Part#

CW182201685
Category

BJT Transistor, BJT
Package

PowerSO-10RF
Description

STMICROELECTRONICS PD57006 RF FET Transistor, 65V, 1A, 20W, 925MHz, 960MHz, PowerSO-10RF
Documentation

Datasheet

PD57006 Global Supplier

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PD57006 Specifications

Attribute	Attribute Value

Part Number	PD57006
Manufacturer	ST Microelectronics
ChipWorker Part#	CW182201685
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	10 Pin
Case/Package	PowerSO-10RF
Supply Voltage (DC)	28.0 V
Polarity	N-Channel
Power Dissipation	20 W
Drain to Source Voltage (Vds)	65 V
Breakdown Voltage (Drain to Source)	65.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	1.00 A
Output Power	6.00 W
Input Capacitance (Ciss)	27pF @28V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	20000 mW
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Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**HF to 2000 MHz Class AB Common Source - PowerSO-10RF**
**VHF / UHF radio and digital cellular BTS applications**
**HF to 2000MHz class AB common source - PowerFLAT**
VHF / UHF radio applications
**HF to 2000MHz class AB common cource - ceramic packages**
**UHF TV and digital cellular BTS applications**
**2 to 400MHz class AB common source N channel MOSFETs**
HF / SSB, FM / VHF broadband applications
**2 to 30MHz class AB linear, common emitter, HF / SSB**

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