PUMD10 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PUMD10
Manufacturer

NXP
ChipWorker Part#

CW114825926
Category

BJT Transistor, BJT
Package

SOT-363
Description

TSSOP NPN+PNP 50V 100mA
Documentation

Datasheet

PUMD10 Global Supplier

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PUMD10 Specifications

Attribute	Attribute Value

Part Number	PUMD10
Manufacturer	NXP
ChipWorker Part#	CW114825926
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363
Number of Positions	6 Position
Polarity	NPN, PNP
Power Dissipation	200 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	100
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
	expand all
Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PUMD10 is a NPN-PNP Resistor Equipped Transistor Array in a surface-mount plastic package. This bipolar device is suitable for low current peripheral driver, control of IC inputs and replaces general-purpose transistors in digital applications.
Built-in bias resistors
Simplifies circuit design
Reduces component count
PUMB10 dual PNP complement
PUMH10 dual NPN complement

expand all

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