RQ3E100BNTB - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

RQ3E100BNTB
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW48427533
Category

MOSFET, MOSFET Transistor
Package

PowerVDFN-8
Description

HSMT N-CH 30V 10A
Documentation

Datasheet

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RQ3E100BNTB Specifications

Attribute	Attribute Value

Part Number	RQ3E100BNTB
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW48427533
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PowerVDFN-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0077 Ω
Polarity	N-Channel
Power Dissipation	2 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	10A
Rise Time	28 ns
Input Capacitance (Ciss)	1100pF @15V(Vds)
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2W (Ta)
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15

Product Description

N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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