S70GL02GS11FHI010 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S70GL02GS11FHI010
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW38558225
Category

Flash Memory, Flash
Package

FBGA-64
Description

NOR Flash Parallel 3V/3.3V 2Gbit 256M/128M x 8Bit/16Bit 110ns 64Pin FBGA Tray
Documentation

Datasheet

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S70GL02GS11FHI010 Specifications

Attribute	Attribute Value

Part Number	S70GL02GS11FHI010
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW38558225
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	64 Pin
Case/Package	FBGA-64
Supply Voltage (DC)	2.70V (min)
Supply Current	60 mA
Number of Positions	64 Position
Number of Bits	8, 16 Bit
Access Time	110 ns
Access Time(Max)	110 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Size-Length	13 mm
Size-Width	11 mm
Size-Height	1 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The S70GL02GS11FHI010 is a 2GB CMOS Flash Non-Volatile Memory fabricated on 65nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for todays eMBedded applications that require higher density, better performance and lower power consumption.
Highest address sector protected
Versatile I/O feature - Wide I/O voltage (VIO) of 1.65V to VCC
Sector erase - Uniform 128kB sectors
Suspend and resume commands for program and erase operations
Status register, data polling and ready/busy pin methods to determine device status
Advanced sector protection - Volatile and non-volatile protection methods for each sector
100000 Erase cycles per sector typical
20 Years data retention typical

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