SBC846BLT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SBC846BLT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7187637
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 65V 0.1A
Documentation

Datasheet

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SBC846BLT1G Specifications

Attribute	Attribute Value

Part Number	SBC846BLT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7187637
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	200 @2mA, 5V
Input Power (Max)	300 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	3.04 mm
Size-Width	2.64 mm
Size-Height	1.11 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The versatility of this NPN SBC846BLT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.

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