SBCP53T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SBCP53T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW30841503
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 80V 1.5A
Documentation

Datasheet

SBCP53T1G Global Supplier

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SBCP53T1G Specifications

Attribute	Attribute Value

Part Number	SBCP53T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW30841503
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	50 MHz
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	1.5 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	1.5A
hFE Min	40 @150mA, 2V
Input Power (Max)	1.5 W
DC Current Gain (hFE)	25
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This PNP SBCP53T1G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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