STB11NM80T4 - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSTB11NM80T4
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ManufacturerST Microelectronics
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ChipWorker Part#CW35700996
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionN-CHANNEL 800V - 0.35Ω - 11A TO-220/TO-220FP/D2PAK/TO-247 MDMESH MOSFET
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DocumentationDatasheet
Payment Methods and Delivery
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STB11NM80T4 Global Supplier
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STB11NM80T4 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | STB11NM80T4 |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW35700996 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Voltage Rating (DC) | 800 V |
| Current Rating | 11.0 A |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.35 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 44.0 A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 1630pF @25V(Vds) |
| Input Power (Max) | 150 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150W (Tc) |
| expand all | |
| Size-Length | 10.75 mm |
| Size-Width | 10.4 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The STB11NM80T4 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. developed using STMicroelectronics" revolutionary MDmesh™ technology, which associates the multiple drain process with the company"s PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST"s proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
- Low gate input resistance
- Best RDS (ON) Qg in the industry
Delivery
Chipworker Certification
Ordering Information
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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