STB33N60M2 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB33N60M2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW64603396
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 650V 26A
Documentation

Datasheet

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STB33N60M2 Specifications

Attribute	Attribute Value

Part Number	STB33N60M2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW64603396
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	125 mΩ
Polarity	N-CH
Power Dissipation	190 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	26A
Rise Time	9.6 ns
Input Capacitance (Ciss)	1781pF @100V(Vds)
Input Power (Max)	190 W
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	190W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

N-Channel 600V 26A (Tc) 190W (Tc) Surface Mount D2PAK

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