STB7NK80ZT4 - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSTB7NK80ZT4
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ManufacturerST Microelectronics
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ChipWorker Part#CW8831903
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionD2PAK N-CH 800V 5.2A
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DocumentationDatasheet
Payment Methods and Delivery
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STB7NK80ZT4 Global Supplier
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STB7NK80ZT4 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | STB7NK80ZT4 |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW8831903 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Voltage Rating (DC) | 800 V |
| Current Rating | 5.20 A |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 5.20 A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 1138pF @25V(Vds) |
| Input Power (Max) | 125 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125W (Tc) |
| expand all | |
| Size-Length | 10.75 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The STB7NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Delivery
Chipworker Certification
Ordering Information
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