STGWA19NC60HD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGWA19NC60HD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW74637030
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 52A 208000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGWA19NC60HD Specifications

Attribute	Attribute Value

Part Number	STGWA19NC60HD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW74637030
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	208000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	31 ns
Input Power (Max)	208 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	208000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGWA19NC60HD IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 208000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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