STGWA60H65DFB - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGWA60H65DFB
Manufacturer

ST Microelectronics
ChipWorker Part#

CW32079230
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGWA60H65DFB Specifications

Attribute	Attribute Value

Part Number	STGWA60H65DFB
Manufacturer	ST Microelectronics
ChipWorker Part#	CW32079230
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	375 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	60 ns
Input Power (Max)	375 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375000 mW
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Size-Length	20.15 mm
Size-Width	15.75 mm
Size-Height	5.15 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the STGWA60H65DFB IGBT transistor from STMicroelectronics.

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