STP16N65M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP16N65M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11516953
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 650V 12A
Documentation

Datasheet

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STP16N65M5 Specifications

Attribute	Attribute Value

Part Number	STP16N65M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11516953
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.23 Ω
Polarity	N-Channel
Power Dissipation	25 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	12A
Rise Time	7 ns
Input Capacitance (Ciss)	1250pF @100V(Vds)
Input Power (Max)	90 W
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	90W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP16N65M5 is a MDmesh™ N-channel Power MOSFET offers excellent switching performance. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
Worldwide best RDS (ON)
High dV/dt capability
100% Avalanche tested

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