STP18NM80 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP18NM80
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10538714
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-channel 800V, 0.25Ω, 17A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages
Documentation

Datasheet

STP18NM80 Global Supplier

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STP18NM80 Specifications

Attribute	Attribute Value

Part Number	STP18NM80
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10538714
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.25 Ω
Polarity	N-Channel
Power Dissipation	190 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	800 V
Rise Time	28 ns
Input Capacitance (Ciss)	2070pF @50V(Vds)
Input Power (Max)	190 W
Fall Time	50 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

Description
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company"s PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications

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