STP3N150 ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

STP3N150
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8637993
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 1500V 2.5A
Documentation

Datasheet
Ships from

Moscow
Наличие

353 pcs In Stock
Estimated Price

$ 4.22

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STP3N150 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	STP3N150
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8637993
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	6 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	4 V
Input Capacitance	939 pF
Drain to Source Voltage (Vds)	1500 V
Continuous Drain Current (Ids)	2.50 A
Rise Time	47 ns
Input Capacitance (Ciss)	939pF @25V(Vds)
Input Power (Max)	140 W
Fall Time	61 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company"s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
100% Avalanche tested
High speed switching
Creepage distance path is 5.4mm

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