STP6NK60ZFP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP6NK60ZFP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1061204
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 600V 6A
Documentation

Datasheet

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STP6NK60ZFP Specifications

Attribute	Attribute Value

Part Number	STP6NK60ZFP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1061204
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.2 Ω
Polarity	N-Channel
Power Dissipation	30 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	6.00 A
Rise Time	14 ns
Input Capacitance (Ciss)	905pF @25V(Vds)
Input Power (Max)	30 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99
HK STC License	NLR

Product Description

The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
Extremely high dv/dt capability
100% Avalanche tested
Gate charge minimized
ESD sensitive device, take proper precaution while handling the device.

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