STP7NK80Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP7NK80Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5417524
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

STMICROELECTRONICS STP7NK80Z Power MOSFET, N Channel, 5.2A, 800V, 1.8Ω, 10V, 3.75V
Documentation

Datasheet

STP7NK80Z Global Supplier

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STP7NK80Z Specifications

Attribute	Attribute Value

Part Number	STP7NK80Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5417524
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	800 V
Current Rating	5.20 A
Power Rating	125 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.8 Ω
Polarity	N-Channel
Power Dissipation	125 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	5.20 A
Rise Time	12 ns
Input Capacitance (Ciss)	1138pF @25V(Vds)
Input Power (Max)	125 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP7NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
100% Avalanche tested
Very low intrinsic capacitance

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