STP9NK70ZFP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP9NK70ZFP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12025133
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
Documentation

Datasheet

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STP9NK70ZFP Specifications

Attribute	Attribute Value

Part Number	STP9NK70ZFP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12025133
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel
Power Dissipation	35 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	700 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	17 ns
Input Capacitance (Ciss)	1370pF @25V(Vds)
Input Power (Max)	35 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	35W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	16.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STP9NK70ZFP is a 700V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
Extremely high dv/dt capability
Improved ESD capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Very good manufacturing repeatability
ESD sensitive device, take proper precaution while handling the device.

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