STPSC10H065DY - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC10H065DY
Manufacturer

ST Microelectronics
ChipWorker Part#

CW72012357
Category

Schottky Diode
Package

TO-220-2
Description

STMICROELECTRONICS STPSC10H065DY Silicon Carbide Schottky Diode, SIC, 650V Series, Single, 650V, 10A, 28.5NC, TO-220AC
Documentation

Datasheet

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STPSC10H065DY Specifications

Attribute	Attribute Value

Part Number	STPSC10H065DY
Manufacturer	ST Microelectronics
ChipWorker Part#	CW72012357
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.75V @10A
Forward Current	10 A
Max Forward Surge Current (Ifsm)	90 A
Forward Current (Max)	10 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
**Key Features**
AEC-Q101 qualified
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
PPAP capable
ECOPACK® 2 compliant component

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