STT818B - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STT818B
Manufacturer

ST Microelectronics
ChipWorker Part#

CW25989709
Category

BJT Transistor, BJT
Package

SOT-23-6
Description

SOT-23 PNP 30V 3A
Documentation

Datasheet

STT818B Global Supplier

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STT818B Specifications

Attribute	Attribute Value

Part Number	STT818B
Manufacturer	ST Microelectronics
ChipWorker Part#	CW25989709
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-23-6
Voltage Rating (DC)	-30.0 V
Current Rating	-3.00 A
Polarity	PNP
Power Dissipation	1.2 W
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	3A
hFE Min	100 @500mA, 1V
Input Power (Max)	1.2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1200 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Description
The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
■ Very low collector to emitter saturation voltage
■ DC current gain > 100 (hFE)
■ 3 A continuous collector current (IC)
Applications
■ Power management in portable equipments
■ Switching regulator in battery charger applications

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