STTH810DI - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STTH810DI
Manufacturer

ST Microelectronics
ChipWorker Part#

CW14176642
Category

TVS Diode
Package

TO-220-3
Description

STMICROELECTRONICS STTH810DI Fast / Ultrafast Power Diode, 1kV, 8A, Single, 1.3V, 47ns, 60A
Documentation

Datasheet

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STTH810DI Specifications

Attribute	Attribute Value

Part Number	STTH810DI
Manufacturer	ST Microelectronics
ChipWorker Part#	CW14176642
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	1.00 kV
Current Rating	8.00 A
Capacitance	7.00 pF
Output Current	≤8.00 A
Forward Voltage	2V @8A
Polarity	Standard
Thermal Resistance	4.1℃/W (RθJC)
Reverse recovery time	47 ns
Forward Current	8 A
Max Forward Surge Current (Ifsm)	60 A
Maximum Forward Voltage (Max)	1.3 V
Forward Current (Max)	8 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	175℃ (Max)
Junction Temperature (Max)	175 ℃
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.9 mm
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STTH810DI is a high-voltage Ultra-fast Diode with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies and similar mission-critical systems that require rectification and freewheeling. It fits into auxiliary functions such as snubber, bootstrap and demagnetization applications. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
Soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current operation
High reverse voltage capability
High junction temperature

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